Integrated silicon modulator based on microring array assisted MZI.
نویسندگان
چکیده
A silicon modulator with microring array assisted MZI is experimentally demonstrated on silicon-on-insulator wafer through CMOS-compatible process. The footprint of the whole modulator is about 600 μm(2). With forward-biased current-driven p-n junction, the 3-dB modulation bandwidth is ~2GHz. Furthermore, the impact of ambient temperature is minified with the help of MZI. Within temperature range of 10 - 70 °C, the maximum divergence of modulation curve is less than ~3 dB.
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عنوان ژورنال:
- Optics express
دوره 22 9 شماره
صفحات -
تاریخ انتشار 2014